unisonic technologies co., ltd ut2352 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2009 unisonic technologies co., ltd qw-r502-157.c p-channel enhancement mode ? description as p-channel logic level mosfet, ut2352 has been optimized for battery power management applications. and it?s produced using utc?s advanced power trench process. ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT2352L-AE3-R ut2352g-ae3-r sot-23 s g d tape reel ? marking bcb l: lead free g: halogen free
ut2352 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-157.c ? absolute maximum ratings (t a = 25 , unless otherwise specified) parameter symbol rating units drain-source voltage v dss -30 v gate-source voltage v gss 25 v continuous drain current i d -1.3 a pulsed drain current i dm -10 a power dissipation (note 3) p d 0.46 w junction temperature t j +150 storage temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol rating unit junction-to-ambient (note 3) ja 250 c/w junction-to-case jc 75 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max units off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250ua -30 v drain-source leakage current i dss v ds =-24v, v gs =0v -1 ua gate-source leakage current i gss v gs =25v, v ds =0v 100 na breakdown voltage temperature coefficient bv dss / t j reference to 25 , i d =-250ua -17 mv/ on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250ua -0.8 -2.0 -2.5 v v gs =-10v, i d =-1.3a 150 180 m ? drain-source on-state resistance (note 2) r ds(on) v gs =-4.5v, i d =-1.1a 250 300 m ? dynamic characteristics input capacitance c iss 150 pf output capacitance c oss 40 pf reverse transfer capacitance c rss v gs =0v, v ds =-15v, f=1mhz 20 pf switching characteristics turn-on delay time (note 2) t d(on) 4 8 ns turn-on rise time t r 15 28 ns turn-off delay time t d(off) 10 18 ns turn-off fall time t f v dd =-10v, v gs =-10v, i d =-1a, r g =6 ? 1 2 ns total gate charge q g 1.4 1.9 nc gate-source charge q gs 0.5 nc gate-drain charge q gd v ds =-10v, v gs =-4.5v, i d =-0.9a 0.5 nc source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd v gs =0v, i s =-0.42 a -0.8 -1.2 v maximum continuous drain source diode forward current i s -0.42 a reverse recovery time t rr 17 ns reverse recovery charge q rr i f = - 3.9 a, di f /dt = 100 a/ s 7 nc notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 2%. 3. surface mounted on 0.001 in 2 pad of 2oz. copper; 270 /w when mounted on min.
ut2352 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-157.c ? typical characteristics drain current,-i d (a) normalized drain-source on- resistance,r ds(on) o n - r e s i s t a n c e , r d s ( o n ) ( o h m ) capaciyance (pf) t a =-55 v ds =-5v 125 25 123 4 56 7 8 0 2 4 6 8 10 drain current,-i d (a) gate to source voltage,-v gs (v) transfer characteristics -55 25 t a =125 v gs =0v 100 10 1 0.1 0.01 0.001 0.0001 0.2 0.0 0.4 0.6 0.81.01.21.4 reverse drain current,-i s (a) body diode forward voltage,-v sd (v) body diode forward voltage variation with source current and temperature
ut2352 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-157.c ? typical characteristics (cont.) i d =-0.9a v gs =-10v 1.4 1.2 1 0.8 0.6 -25 -50 0 25 50 75 100 125 150 junction temperature,t j ( ) normalized drain-source on- resistance r ds(on) on-resistance variatio n with temperature v ds =-10v -15v -20v i d =-0.9a 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 gate charge,q g (nc) gate-source voltage,-v gs (v) gate charge characteristics single pulse r ja =270 /w t a =25 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1000 time,t (sec) peak transient power,p(pk) (w) single pulse maximum power dissipation 100 s 1ms 10ms 100ms dc 10s 1s r ds(on) limit v gs =-10v single pulse r ja =270 /w t a =25 0.1 1 10 100 drain-source voltage,-v ds (v) 0.01 0.1 1 10 100 d r a i n c u r r e n t , - i d ( a ) maximum safe operating area normalized effective transient thermal resistance,r (t)
ut2352 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-157.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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